Pri an gwo Lachin Ac Film Capacitor - Kondansateur fim metalize IGBT Snubber - CRE

Pri an gwo Lachin Kondansateur fim Ac - Kondansateur fim metalize IGBT Snubber - Imaj CRE ki prezante

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Nou kwè nan: Inovasyon se nanm nou ak lespri nou. Bon kalite se lavi nou. Bezwen achtè a se Bondye nou an.Kondansateur pou dèlko enèji van , Kondansateur Koreksyon Faktè Pouvwa , Kondansateur DC Link pou machin soude SimensAvèk yon pakèt pri, bon kalite, pri reyalis ak desen élégance, pwodwi ak solisyon nou yo lajman rekonèt epi itilizatè yo fè yo konfyans epi yo ka satisfè bezwen ekonomik ak sosyal ki toujou ap chanje.

Pri an gwo Lachin Ac Film Capacitor - Metalize fim IGBT Snubber capacitor – CRE Detay:

Done teknik

Ranje tanperati fonksyònman	Tanperati maksimòm fonksyònman., Top, max: +105℃ Tanperati kategori siperyè: +85℃ Tanperati kategori enferyè: -40℃
ranje kapasitans	0.1μF ~ 5.6μF
Vòltaj nominal	700V.DC ~ 3000V.DC
Kap.tol	±5% (J); ±10% (K)
Reziste vòltaj	1.5Un DC/10S
Faktè disipasyon	tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (a 20℃ 100V.DC 60S) C> 0.33μF RS * C≥5000S (nan 20 ℃ 100V.DC 60S)
Reziste kouran grèv la	具体见规格表
Retardasyon flanm dife	UL94V-0
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Nòm referans	IEC61071; GB/T17702;

Vòltaj			Yon 700V.DC, yon rms 400Vac; yon 1050V nan Etazini
	Dimansyon (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33


Vòltaj			Yon 1000V.DC, yon rms 500Vac; yon 1500V nan Etazini
	Dimansyon (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Vòltaj			Yon 1200V.DC, yon rms 550Vac; yon 1800V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32

Vòltaj			Yon 1700V.DC, yon rms 575Vac; yon 2250V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32

Vòltaj			Yon 2000V.DC, yon rms 700Vac; yon 3000V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Vòltaj			Yon 3000V.DC, yon rms 750Vac; yon 4500V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Karakteristik

1. Plastik, sele ak résine;

2. Fil kwiv plake ak fèblan, fasil pou enstale pou IGBT;

3. Rezistans a vòltaj ki wo, tgδ ki ba, ogmantasyon tanperati ki ba;

4. ESL ak ESR ki ba;

5. Kouran pulsasyon wo.

Lè yo itilize konstriksyon entèn ki gen ba enduktans, bwat résine moule opsyonèl, ak tèminasyon Customized, Seri SMJ-P yo fèt pou IGBTS komitasyon rapid epi yo ka sèvi kòm snubbers ak filtè antre frekans segondè aktyèl.

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Gid pwodwi ki gen rapò:

Nou pral toujou satisfè kliyan respekte nou yo ak bon jan kalite, valè siperyè ak asistans siperyè nou an paske nou gen plis eksperyans ak pi travay di epi nou fè li nan yon fason ki abòdab pou Pri Wholesale Lachin Ac Film Capacitor - Metalized film IGBT Snubber capacitor - CRE, Pwodwi a pral delivre nan tout mond lan, tankou: Toronto, Etazini, Repiblik Slovaki, Nou kwè fèmman ke nou gen tout kapasite pou ba ou pwodwi satisfè. Nou vle kolekte kesyon nan men ou epi bati yon nouvo relasyon sinèji alontèm. Nou tout pwomèt sensèman: Menm kalite siperyè, pi bon pri; pri egzak, pi bon kalite.

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