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Polypropylène Snubber kondansateur yo itilize nan aplikasyon pou vòltaj segondè, segondè aktyèl ak segondè batman kè

Deskripsyon kout:

Axial Snubber kondansateur SMJ-TE

Kondansateur Snubber yo se kondansateur segondè-kouran, segondè-frekans ak tèminal axial.Kondansateur fim axial yo disponib nan CRE.Nou ofri envantè, prix, & fich done pou kondansateur fim axial.

1. ISO9001 ak UL sètifye;

2. Envantè vaste;

 


Pwodwi detay

Tags pwodwi

Done teknik

Ranje tanperati opere Tanperati Max.Operating.,Top,max: + 85 ℃ Tanperati kategori anwo: + 85 ℃ Tanperati kategori pi ba: -40 ℃
ranje kapasite 0.1μF ~ 5.6μF
Rated vòltaj

630V.DC ~ 2000V.DC

Cap.tol

±5%(J);±10%(K)

Kenbe vòltaj

1.5Un DC/10S

Faktè dissipation

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz

Rezistans izolasyon

C≤0.33μF RS≥15000 MΩ (nan 20℃ 100V.DC 60S)

C>0.33μF RS*C≥5000S (nan 20℃ 100V.DC 60S)

Kenbe tèt ak kouran grèv

Esperans lavi

100000h (Un; Θhotspot≤85°C)

Estanda referans

IEC 61071;IEC 61881;GB/T17702

Aplikasyon

1. IGBT Snubber, GTO snubber

2. Fonksyon debaz yon snubber se absòbe enèji nan reaktans yo nan kous pouvwa a.

3. Li se lajman ki itilize nan pouvwa ekipman elektwonik lè vòltaj la pik, pik pwoteksyon absòpsyon aktyèl la.

Desen plan

图片1

SMJ-TE axial kondansateur
Voltage Un630V.DC;Urms400Vac;Nou 945V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2
Voltage Yon 1000V.DC;Urms 500Vac;Us 1500V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2
Voltage Yon 1200V.DC;Urms 550Vac;Us 1800V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2
Voltage Yon 1700V.DC;Urms 600Vac;Us 2550V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2
Voltage Yon 2000V.DC;Urms 700Vac;Us 3000V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8
Voltage Yon 3000V.DC;Urms 750Vac;Us 4500V
Kapasite (uF) L (mm ± 1) T (mm±1) H (mm ± 1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt (V/μS) Ipk (A) Irms @25℃ @100KHz (A)
0.047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5

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