Polypropylène Snubber kondansateur yo itilize nan aplikasyon pou vòltaj segondè, segondè aktyèl ak segondè batman kè

Polypropylène Snubber kondansateur yo itilize nan vòltaj segondè, segondè aktyèl ak aplikasyon pou batman segondè Features Imaj

Deskripsyon kout:

Axial Snubber kondansateur SMJ-TE

Kondansateur Snubber yo se kondansateur segondè-kouran, segondè-frekans ak tèminal axial.Kondansateur fim axial yo disponib nan CRE.Nou ofri envantè, prix, & fich done pou kondansateur fim axial.

1. ISO9001 ak UL sètifye;

2. Envantè vaste;

Voye imèl ba nou Telechaje kòm PDF

Pwodwi detay

Tags pwodwi

Done teknik

Ranje tanperati opere	Tanperati Max.Operating.,Top,max: + 85 ℃ Tanperati kategori anwo: + 85 ℃ Tanperati kategori pi ba: -40 ℃
ranje kapasite	0.1μF ~ 5.6μF
Rated vòltaj	630V.DC ~ 2000V.DC
Cap.tol	±5%(J);±10%(K)
Kenbe vòltaj	1.5Un DC/10S
Faktè dissipation	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (nan 20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (nan 20℃ 100V.DC 60S)
Kenbe tèt ak kouran grèv
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Estanda referans	IEC 61071;IEC 61881;GB/T17702

Aplikasyon

1. IGBT Snubber, GTO snubber

2. Fonksyon debaz yon snubber se absòbe enèji nan reaktans yo nan kous pouvwa a.

3. Li se lajman ki itilize nan pouvwa ekipman elektwonik lè vòltaj la pik, pik pwoteksyon absòpsyon aktyèl la.

Desen plan

SMJ-TE axial kondansateur
Voltage		Un630V.DC;Urms400Vac;Nou 945V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.22	32	9.5	17.5	0.8	16	23	300	66	5.3
0.33	32	12	20	1	13	22	200	66	6.5
0.47	32	14.5	22.5	1	11	21	220	103.4	8.3
0.68	32	18	26	1	10	20	180	122.4	9.5
1	37	11	19	1	8	28	150	150	7.6
1.5	37	13.5	21.5	1	7	27	150	225	9.5
2	37	16	24	1.2	6	24	130	260	10.2
2.5	37	18	26	1.2	5.5	25	120	300	10.5
3	37	20	28	1.2	5	30	110	330	10.8
3.3	37	21	29	1.2	4.5	30	110	363	11.2
4	57	27	36.5	1.2	4.2	32	220	880	12.8
4.7	57	28	40.5	1.2	3.8	32	200	940	13.8
5.6	57	31	33.5	1.2	3.5	32	185	1036	13.5
6.8	37	29	41.5	1.2	2.5	28	100	680	13.8
6.8	57	34	46.5	1.2	2.8	30	180	1224	14.2
Voltage		Yon 1000V.DC;Urms 500Vac;Us 1500V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.15	32	10	17.5	0.8	20	20	1100	165	5.5
0.22	32	12	20	1	15	21	1000	220	7.3
0.33	32	15.5	23	1	13	21	1000	330	8.7
0.47	32	18.5	26	1.2	10	23	1000	470	10.5
0.47	44	14	22	1.2	9	24	900	423	9.5
0.68	32	20	32.5	1.2	7	25	900	612	10.8
0.68	44	17	25	1.2	6	26	800	544	10.2
1	44	21.5	29.5	1.2	5.6	27	900	900	11
1.5	44	26	35.5	1.2	5	29	900	1350	12
1.5	57	21	29	1.2	5	30	700	1050	12.2
2	44	28	40.5	1.2	4.8	30	800	1600	13.2
2	57	24	33.5	1.2	4.8	32	600	1200	12.8
2.2	44	30	42.5	1.2	4.2	32	600	1320	13.8
2.2	57	25	34.5	1.2	4.2	32	500	1100	13.5
2.5	57	25	38	1.2	4	33	500	1250	14.2
3	57	28	40.5	1.2	3.5	34	480	1440	15.6
3.3	57	29.5	42	1.2	3.2	35	450	1485	16.5
3.5	57	30.5	43	1.2	3.2	35	450	1575	17.2
4.7	57	35	50.5	1.2	3	36	420	1974	17.8
5.6	57	38.5	65	1.2	2.8	38	400	2240	18.2
Voltage		Yon 1200V.DC;Urms 550Vac;Us 1800V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.1	32	8.5	16	0.8	20	20	1300	130	6
0.15	32	10	17.5	1	18	20	1200	180	7.5
0.22	32	13	21	1	15	22	1200	264	8.3
0.33	32	16	24	1	12	23	1200	396	9
0.47	32	17.5	30	1.2	10	23	1200	564	9.5
0.47	44	15	23	1.2	9	26	1100	517	9.8
0.68	32	21.5	34	1.2	8	25	1100	517	10
0.68	44	18.5	26.5	1.2	6	27	1000	680	11.7
1	44	23	31	1.2	5	28	1000	1000	12.4
1.5	44	26.5	39	1.2	5	30	950	1425	13.5
1.5	57	22.5	30.5	1.2	5	29	900	1350	12.6
2	44	29	45	1.2	5	30	800	1600	14.2
2	57	26.5	34.5	1.2	4.8	30	750	1500	13.8
2.2	44	31	47	1.2	4.2	32	800	1760	14.5
2.2	57	27.5	35.5	1.2	4.2	35	700	1540	14.5
3	57	29	44.5	1.2	3.2	37	500	1500	17.2
3.3	57	30.5	46	1.2	3.2	38	450	1485	17.8
4.7	57	38	53.5	1.2	3	38	420	1974	18.2
Voltage		Yon 1700V.DC;Urms 600Vac;Us 2550V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.1	32	9.5	17.5	0.8	18	25	1300	130	7.5
0.15	32	12	20	1	16	24	1200	180	8.5
0.22	32	15	23	1	15	24	1200	264	9.3
0.33	32	18.5	26.5	1	12	22	1200	396	9.9
0.33	44	13.5	21.5	1.2	12	29	1100	363	10.2
0.47	44	16	24	1.2	9	28	1000	470	11.2
0.68	44	20	28	1.2	8	27	1000	680	11.7
1	44	24	33.5	1.2	5.6	26	900	900	12.4
1	57	19.5	27.5	1.2	6	33	850	850	10.8
1.5	44	28	40.5	1.2	4.8	25	800	1200	13.5
1.5	57	24	32	1.2	5	33	750	1125	13.5
2	44	31.5	47	1.2	4.5	24	750	1500	14.2
2	57	27.5	37	1.2	4.8	32	650	1300	12.8
2.2	44	33.5	49	1.2	4.5	34	700	1540	15.6
2.2	57	29	40	1.2	4.2	32	600	1320	14.5
3	57	31	46.5	1.2	4	30	560	1680	17.2
3.3	57	33	48.5	1.2	3.2	29	500	1650	17.6
4	57	37	52.5	1.2	3	28	450	1800	18.2
Voltage		Yon 2000V.DC;Urms 700Vac;Us 3000V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.068	32	9	17	0.8	25	23	1500	102	6.9
0.1	32	11.5	19.5	1	18	22	1500	150	8.2
0.1	37	10.5	18.5	1	18	26	1450	145	8
0.22	32	17.5	25.5	1.2	15	21	1400	308	9.1
0.22	37	16	24	1.2	15	25	1300	286	9
0.33	37	20	28	1.2	12	24	1250	412.5	9.5
0.33	44	18	26	1.2	12	30	1200	396	10.2
0.47	44	19.5	32	1.2	10	29	1100	517	12.4
0.68	44	24	36.5	1.2	8	28	1000	680	14.2
0.68	57	18.5	31	1.2	8	27	900	612	14.2
1	57	23.5	36	1.2	6	31	950	950	14.5
1.5	57	29.5	42	1.2	5	31	850	1275	14.5
2	57	33	48.5	1.2	4.2	31	750	1500	16.5
2.2	57	35	50.5	1.2	4	30	700	1540	17.8
Voltage		Yon 3000V.DC;Urms 750Vac;Us 4500V
Kapasite (uF)	L (mm ± 1)	T (mm±1)	H (mm ± 1)	φd (mm)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @25℃ @100KHz (A)
0.047	44	13.5	21.5	1	22	20	2000	94	8.5
0.068	44	17	25	1	20	20	1800	122.4	10.5
0.1	44	20.5	28.5	1.2	18	20	1500	150	12.4
0.15	44	26	34	1.2	16	22	1350	202.5	13.8
0.22	44	29	41.5	1.2	14.5	22	1200	264	14.5