E-mail: info@cre-elec.com
English
  • bbb

Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - CRE

Manifakti dirijan pou kondansateur DC Link konsepsyon pèsonalize - kondansateur snubber Axial GTO - Imaj CRE prezante
  • Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - CRE
  • Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - CRE
  • Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - CRE

Deskripsyon kout:


Telechaje kòm PDF

Detay pwodwi

Etikèt pwodwi yo

Videyo ki gen rapò

Fidbak (2)

Nòmalman, nou ka satisfè kliyan respekte nou yo ak sèvis ekselan nou an, bon valè ak bon sèvis paske nou pi espesyalis e nou travay di, epi nou fè l yon fason ki pa koute chè.Kondansateur Endiksyon pou Kondansateur Fizyon , Segondè Dv/Dt Rezistans Gto Snubber , Solisyon Kondansateur pou Elektwonik Pouvwa, Si w enterese nan nenpòt nan atik nou yo, tanpri pa ezite kontakte nou epi fè premye pa a pou konstwi yon relasyon biznis ki reyisi.
Dirijan manifakti pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - Detay CRE:

Done teknik

Ranje tanperati fonksyònman Tanperati maksimòm fonksyònman., Top, max: + 85℃ Tanperati kategori siperyè: +85℃ Tanperati kategori enferyè: -40℃
ranje kapasitans 0.1μF ~ 5.6μF
Vòltaj nominal

630V.DC ~ 2000V.DC
Kap.tol

±5% (J); ±10% (K)
Reziste vòltaj

1.5Un DC/10S
Faktè disipasyon

tgδ≤0.0005 C≤1μF f=10KHz

tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon

C≤0.33μF RS≥15000 MΩ (nan 20℃ 100V.DC 60S)

C> 0.33μF RS * C≥ 5000S (nan 20 ℃ 100V.DC 60S)
Reziste kouran grèv la
Esperans lavi

100000h (Un; Θhotspot≤85°C)
Nòm referans

IEC 61071; IEC 61881; GB/T17702

Aplikasyon

1. Amortisè IGBT.

2. Lajman itilize nan ekipman elektwonik pouvwa lè vòltaj pik la, pwoteksyon absòpsyon kouran pik la.

Desen eskòt

 

1

 

 

 

 

Kondansateur axial SMJ-TE
Vòltaj Un630V.DC; Urms400Vac; Nou 945V
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.22 32 9.5 17.5 0.8 16 23 300 66 5.3
0.33 32 12 20 1 13 22 200 66 6.5
0.47 32 14.5 22.5 1 11 21 220 103.4 8.3
0.68 32 18 26 1 10 20 180 122.4 9.5
1 37 11 19 1 8 28 150 150 7.6
1.5 37 13.5 21.5 1 7 27 150 225 9.5
2 37 16 24 1.2 6 24 130 260 10.2
2.5 37 18 26 1.2 5.5 25 120 300 10.5
3 37 20 28 1.2 5 30 110 330 10.8
3.3 37 21 29 1.2 4.5 30 110 363 11.2
4 57 27 36.5 1.2 4.2 32 220 880 12.8
4.7 57 28 40.5 1.2 3.8 32 200 940 13.8
5.6 57 31 33.5 1.2 3.5 32 185 1036 13.5
6.8 37 29 41.5 1.2 2.5 28 100 680 13.8
6.8 57 34 46.5 1.2 2.8 30 180 1224 14.2

 

Vòltaj Yon 1000V.DC; Yon emisyon 500Vac; Yon 1500V nan Etazini
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.15 32 10 17.5 0.8 20 20 1100 165 5.5
0.22 32 12 20 1 15 21 1000 220 7.3
0.33 32 15.5 23 1 13 21 1000 330 8.7
0.47 32 18.5 26 1.2 10 23 1000 470 10.5
0.47 44 14 22 1.2 9 24 900 423 9.5
0.68 32 20 32.5 1.2 7 25 900 612 10.8
0.68 44 17 25 1.2 6 26 800 544 10.2
1 44 21.5 29.5 1.2 5.6 27 900 900 11
1.5 44 26 35.5 1.2 5 29 900 1350 12
1.5 57 21 29 1.2 5 30 700 1050 12.2
2 44 28 40.5 1.2 4.8 30 800 1600 13.2
2 57 24 33.5 1.2 4.8 32 600 1200 12.8
2.2 44 30 42.5 1.2 4.2 32 600 1320 13.8
2.2 57 25 34.5 1.2 4.2 32 500 1100 13.5
2.5 57 25 38 1.2 4 33 500 1250 14.2
3 57 28 40.5 1.2 3.5 34 480 1440 15.6
3.3 57 29.5 42 1.2 3.2 35 450 1485 16.5
3.5 57 30.5 43 1.2 3.2 35 450 1575 17.2
4.7 57 35 50.5 1.2 3 36 420 1974 17.8
5.6 57 38.5 65 1.2 2.8 38 400 2240 18.2

 

Vòltaj Yon 1200V.DC; Yon emisyon 550Vac; Yon 1800V nan Etazini
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.1 32 8.5 16 0.8 20 20 1300 130 6
0.15 32 10 17.5 1 18 20 1200 180 7.5
0.22 32 13 21 1 15 22 1200 264 8.3
0.33 32 16 24 1 12 23 1200 396 9
0.47 32 17.5 30 1.2 10 23 1200 564 9.5
0.47 44 15 23 1.2 9 26 1100 517 9.8
0.68 32 21.5 34 1.2 8 25 1100 517 10
0.68 44 18.5 26.5 1.2 6 27 1000 680 11.7
1 44 23 31 1.2 5 28 1000 1000 12.4
1.5 44 26.5 39 1.2 5 30 950 1425 13.5
1.5 57 22.5 30.5 1.2 5 29 900 1350 12.6
2 44 29 45 1.2 5 30 800 1600 14.2
2 57 26.5 34.5 1.2 4.8 30 750 1500 13.8
2.2 44 31 47 1.2 4.2 32 800 1760 14.5
2.2 57 27.5 35.5 1.2 4.2 35 700 1540 14.5
3 57 29 44.5 1.2 3.2 37 500 1500 17.2
3.3 57 30.5 46 1.2 3.2 38 450 1485 17.8
4.7 57 38 53.5 1.2 3 38 420 1974 18.2

 

Vòltaj Yon 1700V.DC; Yon emisyon 600Vac; Yon 2550V nan Etazini
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.1 32 9.5 17.5 0.8 18 25 1300 130 7.5
0.15 32 12 20 1 16 24 1200 180 8.5
0.22 32 15 23 1 15 24 1200 264 9.3
0.33 32 18.5 26.5 1 12 22 1200 396 9.9
0.33 44 13.5 21.5 1.2 12 29 1100 363 10.2
0.47 44 16 24 1.2 9 28 1000 470 11.2
0.68 44 20 28 1.2 8 27 1000 680 11.7
1 44 24 33.5 1.2 5.6 26 900 900 12.4
1 57 19.5 27.5 1.2 6 33 850 850 10.8
1.5 44 28 40.5 1.2 4.8 25 800 1200 13.5
1.5 57 24 32 1.2 5 33 750 1125 13.5
2 44 31.5 47 1.2 4.5 24 750 1500 14.2
2 57 27.5 37 1.2 4.8 32 650 1300 12.8
2.2 44 33.5 49 1.2 4.5 34 700 1540 15.6
2.2 57 29 40 1.2 4.2 32 600 1320 14.5
3 57 31 46.5 1.2 4 30 560 1680 17.2
3.3 57 33 48.5 1.2 3.2 29 500 1650 17.6
4 57 37 52.5 1.2 3 28 450 1800 18.2

 

Vòltaj Yon 2000V.DC; Yon emisyon 700Vac; Nou 3000V
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.068 32 9 17 0.8 25 23 1500 102 6.9
0.1 32 11.5 19.5 1 18 22 1500 150 8.2
0.1 37 10.5 18.5 1 18 26 1450 145 8
0.22 32 17.5 25.5 1.2 15 21 1400 308 9.1
0.22 37 16 24 1.2 15 25 1300 286 9
0.33 37 20 28 1.2 12 24 1250 412.5 9.5
0.33 44 18 26 1.2 12 30 1200 396 10.2
0.47 44 19.5 32 1.2 10 29 1100 517 12.4
0.68 44 24 36.5 1.2 8 28 1000 680 14.2
0.68 57 18.5 31 1.2 8 27 900 612 14.2
1 57 23.5 36 1.2 6 31 950 950 14.5
1.5 57 29.5 42 1.2 5 31 850 1275 14.5
2 57 33 48.5 1.2 4.2 31 750 1500 16.5
2.2 57 35 50.5 1.2 4 30 700 1540 17.8

 

Vòltaj Yon 3000V.DC; Yon emisyon 750Vac; Nou 4500V
Kapasitans (uF) Longè (mm±1) T (mm±1) H (mm±1) φd (mm) ESR @100KHz (mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms @25℃ @100KHz (A)
0.047 44 13.5 21.5 1 22 20 2000 94 8.5
0.068 44 17 25 1 20 20 1800 122.4 10.5
0.1 44 20.5 28.5 1.2 18 20 1500 150 12.4
0.15 44 26 34 1.2 16 22 1350 202.5 13.8
0.22 44 29 41.5 1.2 14.5 22 1200 264 14.5
Foto detay pwodwi:

Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - foto detay CRE

Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - foto detay CRE

Manifakti dirijan pou kondansateur DC Link Custom Design - kondansateur snubber Axial GTO - foto detay CRE

Gid pwodwi ki gen rapò:
Konpayi nou an ap konsantre sou estrateji mak nou an. Satisfaksyon kliyan yo se pi gwo piblisite nou. Nou jwenn tou sèvis OEM pou dirijan manifakti pou kondansateur Dc Link Custom Design - kondansateur snubber Axial GTO - CRE. Pwodwi a pral apwovizyone nan tout mond lan, tankou: Vyetnam, Bèlen, Peyi Ba yo. Avantaj nou yo se inovasyon, fleksibilite ak fyab nou yo ki te bati pandan 20 dènye ane yo. Nou konsantre sou bay sèvis pou kliyan nou yo kòm yon eleman kle nan ranfòse relasyon alontèm nou yo. Disponibilite kontinyèl pwodwi kalite siperyè an konbinezon ak ekselan sèvis pre- ak apre-lavant nou an asire yon gwo compétitivité nan yon mache de pli zan pli globalize.
    • Manifakti sa a ka kontinye amelyore epi pèfeksyone pwodwi ak sèvis, li an konfòmite avèk règ konpetisyon mache a, yon konpayi konpetitif. 5 Zetwal Pa Karl soti Seattle - 2017.02.18 15:54
    Faktori a gen ekipman avanse, anplwaye ki gen eksperyans ak bon nivo jesyon, kidonk bon jan kalite pwodwi te gen asirans, koperasyon sa a trè rilaks e kontan! 5 Zetwal Pa Eileen soti Orlando - 2018.10.31 10:02

    Voye mesaj ou a ban nou:

    Ekri mesaj ou a isit la epi voye l ban nou

    Kategori pwodwi yo

    Voye mesaj ou a ban nou: