Faktori te fè cho-sale Snubber Pou High Powered Tiristor - High-klas IGBT Snubber kondansateur konsepsyon pou aplikasyon pou gwo pouvwa - CRE

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Dedye a jesyon bon jan kalite strik ak sèvis kliyan reflechi, kliyan anplwaye ki gen eksperyans nou yo jeneralman disponib pou diskite sou demand ou yo ak garanti plen plezi kliyan pouAC kondansateur pou ekipman soude , Elektwonik fim kondansateur , Silendrik aliminyòm ka fim kondansateur, Nou sensèman akeyi zanmi ki soti toupatou nan mond lan pou kolabore avèk nou nan fondasyon benefis mityèl alontèm.

Faktori te fè cho-sale Snubber Pou High Powered Tiristor - High-klas IGBT Snubber kondansateur konsepsyon pou aplikasyon pou gwo pouvwa - CRE Detay:

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Ranje tanperati opere	Tanperati Max.Operating.,Top,max: +105℃ Tanperati kategori siperyè: +85 ℃ Tanperati kategori ki pi ba: -40 ℃
ranje kapasite	0.1μF ~ 5.6μF
Rated vòltaj	700V.DC ~ 3000V.DC
Cap.tol	±5%(J);±10%(K)
Kenbe vòltaj	1.5Un DC/10S
Faktè dissipation	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (a 20℃ 100V.DC 60S)
Kenbe tèt ak kouran grèv	gade fichye done
Retardasyon flanm dife	UL94V-0
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Estanda referans	IEC61071;GB/T17702;

Tablo spesifikasyon

Voltage	Yon 700V.DC,Urms400Vac;Us1050V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voltage	Yon 1000V.DC,Urms500Vac;Us1500V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voltage	Yon 1200V.DC,Urms550Vac;Us1800V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Voltage	Yon 1700V.DC,Urms575Vac;Us2250V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voltage	Yon 2000V.DC,Urms700Vac;Us3000V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voltage	Yon 3000V.DC,Urms750Vac;Us4500V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Foto detay pwodwi:

Gid pwodwi ki gen rapò:

Nou jwi yon estati trè bon nan mitan kandida nou yo pou bon jan kalite gwo machandiz nou an, pri konpetitif ak sèvis ideyal la pou faktori te fè cho-sale Snubber Pou High Powered Thyristor - High-class IGBT Snubber kondansateur konsepsyon pou aplikasyon pou gwo pouvwa - CRE , Pwodwi a pral founi nan tout mond lan, tankou: Sesel, Manchester, Brasilia, Gwoup jeni pwofesyonèl nou an ap toujou pare pou sèvi ou pou konsiltasyon ak fidbak.Nou kapab tou ofri ou ak echantiyon absoliman gratis pou satisfè kondisyon ou yo.Pi rafine efò yo pral gen chans pou yo pwodwi yo ofri ou sèvis ideyal la ak machandiz yo.Pou nenpòt moun ki ap panse sou konpayi nou an ak machandiz, asire w ke ou kontakte nou pa voye imèl nou oswa kontakte nou byen vit.Kòm yon fason yo konnen machandiz nou yo ak fèm.anpil plis, ou ka vin nan faktori nou an pou chèche konnen li.Nou pral toujou akeyi envite soti nan tout mond lan nan biznis nou an pou konstwi relasyon konpayi avèk nou.Asire w ke w lib pou w kontakte nou pou biznis e nou kwè ke nou te gen entansyon pataje pi gwo eksperyans pratik nan komès ak tout machann nou yo.

Filtè AC yo itilize pou sistèm pouvwa Rail Traction