Snubber cho-vann ki fèt nan faktori pou Thyristor ki gen gwo pouvwa - Konsepsyon kondansateur Snubber IGBT ki gen gwo klas pou aplikasyon pou gwo pouvwa - CRE

Snubber cho-vann ki fèt nan faktori pou Thyristor ki gen gwo pouvwa - Konsepsyon kondansateur Snubber IGBT klas siperyè pou aplikasyon pou gwo pouvwa - Imaj CRE ki prezante

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Nou gen anplwaye lavant, anplwaye stil ak konsepsyon, ekip teknik, ekip QC ak anplwaye anbalaj. Nou gen pwosedi kontwòl ekselan strik pou chak sistèm. Epitou, tout travayè nou yo gen eksperyans nan domèn enprime pouKondansateur Mkp , Kondansateur Ac ki fèt sou mezi , Bank Kondansateur Filtè AcNou pral bay pi bon kalite a, petèt pri ki pi konpetitif sou mache a, pou chak kliyan, nouvo kou ansyen, avèk pi bon solisyon ekolojik yo.

Snubber cho-vann ki fèt nan faktori pou Thyristor ki gen gwo pouvwa - Konsepsyon kondansateur IGBT Snubber ki gen gwo pouvwa pou aplikasyon pou gwo pouvwa - Detay CRE:

Done teknik

Ranje tanperati fonksyònman	Tanperati maksimòm fonksyònman., Top, max: +105 ℃ Tanperati kategori siperyè: +85 ℃ Tanperati kategori ki pi ba: -40 ℃
ranje kapasitans	0.1μF ~ 5.6μF
Vòltaj nominal	700V.DC ~ 3000V.DC
Kap.tol	±5% (J); ±10% (K)
Reziste vòltaj	1.5Un DC/10S
Faktè disipasyon	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (a 20℃ 100V.DC 60S) C> 0.33μF RS * C≥5000S (nan 20 ℃ 100V.DC 60S)
Reziste kouran grèv la	gade fich done a
Retardasyon flanm dife	UL94V-0
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Nòm referans	IEC61071; GB/T17702;

Tablo spesifikasyon

Vòltaj	Yon 700V.DC, yon rms 400Vac; yon 1050V nan Etazini
	Dimansyon (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Vòltaj	Yon 1000V.DC, yon rms 500Vac; yon 1500V nan Etazini
	Dimansyon (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Vòltaj	Yon 1200V.DC, yon rms 550Vac; yon 1800V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Vòltaj	Yon 1700V.DC, yon rms 575Vac; yon 2250V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Vòltaj	Yon 2000V.DC, yon rms 700Vac; yon 3000V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Vòltaj	Yon 3000V.DC, yon rms 750Vac; yon 4500V nan Etazini
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Foto detay pwodwi:

Gid pwodwi ki gen rapò:

Machandiz nou yo souvan idantifye epi yo fyab pa itilizatè final yo epi yo pral satisfè dezi finansye ak sosyal ki toujou ap chanje pou Snubber cho-vann nan faktori pou Thyristor Segondè Puisans - Konsepsyon kondansateur Snubber IGBT klas segondè pou aplikasyon pou gwo pouvwa - CRE, Pwodwi a pral apwovizyone nan tout mond lan, tankou: Maròk, El Salvador, Leicester, "Bon kalite ak pri rezonab" se prensip biznis nou yo. Si w enterese nan pwodwi nou yo oswa ou gen nenpòt kesyon, tanpri ou lib pou kontakte nou. Nou espere etabli relasyon kowoperasyon avèk ou nan fiti prè.

Filtè AC itilize pou sistèm pouvwa traksyon ray tren

Kondansateur DC-Link pou envèstisè endistriyèl yo

Kondansateur fim tip sèk

Faktori Kondansateur Fim

Manifakti Kondansateur Fim

Founisè Kondansateur Mondyal

Kondansateur Depo Enèji Segondè

Amortisè Igbt

Kondansateur rezonans founo frekans mwayen

Kondansateur pouvwa pou lyen DC

Konpayi an kenbe prensip operasyon "jesyon syantifik, kalite siperyè ak efikasite priyorite, kliyan sipwèm", nou toujou kenbe koperasyon biznis. Travay avèk ou, nou santi nou alèz!