OEM manifakti pouvwa fim elektwonik kondansateur - High pik aktyèl snubber fim kondansateur konsepsyon pou aplikasyon pou elektwonik pouvwa IGBT - CRE

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Nou bay bon pouvwa nan-wo kalite ak pwogrè, machandiz, revni ak maketing entènèt ak operasyon pouHigh Voltage Power Elektwonik kondansateur , Low Inductance kondansateur , Film kondansateur konsepsyon, Nou akeyi kliyan, asosyasyon biznis ak zanmi ki soti nan tout pati nan mond lan kontakte nou epi chèche koperasyon pou benefis mityèl.

OEM manifakti pouvwa fim elektwonik kondansateur - High pik aktyèl snubber fim kondansateur konsepsyon pou aplikasyon pou elektwonik pouvwa IGBT - CRE Detay:

Done teknik

Ranje tanperati opere	Tanperati Max.Operating.,Top,max: +105℃ Tanperati kategori siperyè: +85 ℃ Tanperati kategori ki pi ba: -40 ℃
ranje kapasite	0.1μF ~ 5.6μF
Rated vòltaj	700V.DC ~ 3000V.DC
Cap.tol	±5%(J);±10%(K)
Kenbe vòltaj	1.5Un DC/10S
Faktè dissipation	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (a 20℃ 100V.DC 60S)
Kenbe tèt ak kouran grèv	gade fichye done
Retardasyon flanm dife	UL94V-0
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Estanda referans	IEC61071;GB/T17702;

Tablo spesifikasyon

Voltage	Yon 700V.DC,Urms400Vac;Us1050V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voltage	Yon 1000V.DC,Urms500Vac;Us1500V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voltage	Yon 1200V.DC,Urms550Vac;Us1800V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Voltage	Yon 1700V.DC,Urms575Vac;Us2250V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voltage	Yon 2000V.DC,Urms700Vac;Us3000V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voltage	Yon 3000V.DC,Urms750Vac;Us4500V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Foto detay pwodwi:

Gid pwodwi ki gen rapò:

Pou ogmante regilyèman pwogram nan jesyon pa vèti soti nan règ la nan "sensèrman, bon relijyon ak bon jan kalite segondè yo se baz la nan devlopman antrepriz", nou anpil absòbe sans nan pwodwi lye entènasyonalman, ak toujou ap pwodwi nouvo machandiz satisfè apèl yo pou nan achtè. pou OEM Manufacturer Power Electronic Film Capacitor - High pik aktyèl snubber fim kondansateur konsepsyon pou aplikasyon pou IGBT pouvwa elektwonik - CRE , Pwodwi a pral bay nan tout mond lan, tankou: Kwoasi, Miami, Ongri, nou ap kounye a kap pou pi devan pou menm pi gwo koperasyon ak kliyan lòt bò dlo ki baze sou benefis mityèl.Nou pral travay ak tout kè nou amelyore pwodwi nou yo ak sèvis yo.Nou pwomèt tou pou travay ansanm ak patnè biznis yo pou elve koperasyon nou an nan yon pi wo nivo epi pataje siksè ansanm.Byenveni ou vizite faktori nou an sensèman.

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Nan grosist kolabore nou yo, konpayi sa a gen pi bon kalite ak pri rezonab, yo se premye chwa nou an.

Pa Klemen Hrovat soti nan Kwoasi - 2018.08.12 12:27

Konpayi sa a gen lide nan "pi bon kalite, pi ba depans pwosesis, pri yo pi rezonab", kidonk yo gen bon jan kalite pwodwi konpetitif ak pri, sa a se rezon prensipal nou te chwazi yo kolabore.

Pa John biddlestone soti nan Emira Arab Ini - 2018.09.21 11:01