GTO snubber kondansateur nan pouvwa ekipman elektwonik

Deskripsyon kout:

Sikui Snubber yo esansyèl pou dyod yo itilize nan sikui chanje.Li ka sove yon dyod ki soti nan pwent survoltaj, ki ka leve pandan pwosesis rekiperasyon ranvèse a.

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Pwodwi detay

Tags pwodwi

Done teknik

Ranje tanperati opere	Tanperati Max.Operating.,Top,max: + 85 ℃ Tanperati kategori anwo: + 85 ℃ Tanperati kategori pi ba: -40 ℃
ranje kapasite	0.22 ~ 3μF
Rated vòltaj	3000V.DC～10000V.DC
Cap.tol	±5%(J);±10%(K)
Kenbe vòltaj	1.35Un DC/10S
Faktè dissipation	tgδ≤0.001 f = 1KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (nan 20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (nan 20℃ 100V.DC 60S)
Kenbe tèt ak kouran grèv	gade fichye done
Esperans lavi	100000h (Un; Θhotspot≤70°C)
Estanda referans	IEC 61071 ;

Karakteristik

1. Mylar tep, sele ak résine;

2. Pwen nwa kwiv;

3. Rezistans nan vòltaj segondè, ba tgδ, ogmantasyon tanperati ki ba;

4. ba ESL ak ESR;

5. Segondè batman kè aktyèl.

Aplikasyon

1. GTO Snubber.

2. lajman te itilize nan pouvwa ekipman elektwonik lè pik vòltaj la, pik aktyèl pwoteksyon Absòbsyon.

Sikwi tipik

Desen plan

Spesifikasyon

Un=3000V.DC
Kapasite (μF)	φD (mm)	L (mm)	L1 (mm)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms (A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Kapasite (μF)	φD (mm)	L (mm)	L1 (mm)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms (A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Kapasite (μF)	φD (mm)	L (mm)	L1 (mm)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms (A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Kapasite (μF)	φD (mm)	L (mm)	L1 (mm)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms (A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Kapasite (μF)	φD (mm)	L (mm)	L1 (mm)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms (A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70