Pi bon mache pri ki ba pèt pouvwa endiksyon chofaj kondansateur - High pik aktyèl snubber fim kondansateur konsepsyon pou aplikasyon pou elektwonik pouvwa IGBT - CRE

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Nou mete aksan sou avansman ak prezante nouvo pwodwi ak solisyon nan mache a chak ane pouKondansateur sonorite Custom-Made , Customized Kondansateur Bank , Pouvwa elektwonik AC kondansateur, Nou konplètman akeyi kliyan ki soti nan tout mond lan pou etabli relasyon biznis ki estab ak mityèlman benefisye, yo gen yon avni briyan ansanm.

Pi bon mache pri ki ba pèt pouvwa endiksyon chofaj kondansateur - High pik aktyèl kondansateur fim snubber konsepsyon pou aplikasyon pou elektwonik pouvwa IGBT - CRE Detay:

Done teknik

Ranje tanperati opere	Tanperati Max.Operating.,Top,max: +105℃ Tanperati kategori siperyè: +85 ℃ Tanperati kategori ki pi ba: -40 ℃
ranje kapasite	0.1μF ~ 5.6μF
Rated vòltaj	700V.DC ~ 3000V.DC
Cap.tol	±5%(J);±10%(K)
Kenbe vòltaj	1.5Un DC/10S
Faktè dissipation	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Rezistans izolasyon	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (a 20℃ 100V.DC 60S)
Kenbe tèt ak kouran grèv	gade fichye done
Retardasyon flanm dife	UL94V-0
Esperans lavi	100000h (Un; Θhotspot≤85°C)
Estanda referans	IEC61071;GB/T17702;

Tablo spesifikasyon

Voltage	Yon 700V.DC,Urms400Vac;Us1050V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voltage	Yon 1000V.DC,Urms500Vac;Us1500V
	Dimansyon (mm)
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voltage	Yon 1200V.DC,Urms550Vac;Us1800V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Voltage	Yon 1700V.DC,Urms575Vac;Us2250V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voltage	Yon 2000V.DC,Urms700Vac;Us3000V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voltage	Yon 3000V.DC,Urms750Vac;Us4500V
Cn (μF)	L(±1)	T(±1)	H(±1)	ESR (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk (A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Foto detay pwodwi:

Gid pwodwi ki gen rapò:

Nou jwi yon estati trè bon nan mitan kandida nou yo pou bon jan kalite gwo machandiz nou an, pri konpetitif ak sèvis ideyal la pou pi bon mache pri ki ba pèt pouvwa endiksyon chofaj kondansateur - High pik aktyèl snubber fim kondansateur konsepsyon pou aplikasyon pou IGBT pouvwa elektwonik - CRE , pwodwi a pral ekipman pou nan tout mond lan, tankou: Emira Arab Ini, Burundi, Accra, Konpayi nou an toujou konsantre sou devlopman nan mache entènasyonal la.Nou gen yon anpil nan kliyan nan Larisi, peyi Ewopeyen yo, USA a, peyi Mwayen Oryan yo ak peyi Afrik.Nou toujou swiv ke bon jan kalite se fondasyon pandan y ap sèvis se garanti satisfè tout kliyan.

Customized Kondansateur Bank

Kondansateur enèji-depo

Fim kondansateur pou pouvwa varyateur

Kat Pins Tèminal Kondansateur

Kondansateur sonorite amonik

Igbt Snubber

Metalize Pp fim kondansateur

Kondansateur koreksyon faktè pouvwa

Pwofesyonèl kondansateur solisyon

Solè pouvwa kondansateur

Espere ke konpayi an ta ka kenbe nan lespri antrepriz la nan "Kalite, Efikasite, Inovasyon ak Entegrite", li pral pi bon ak pi bon nan tan kap vini an.